Electronic Transport in Mesoscopic Systems
Cambridge University Press, 15 mai 1997 - 377 pages
Recent advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives the first thorough account of the theory of electronic transport in such mesoscopic systems. Beginning with coverage of fundamental concepts, the book presents a detailed account of transmission function formalism which is used to describe three key topics in mesoscopic physics: the quantum Hall effect, localization, and double-barrier tunneling. Other sections include a discussion of optical analogies to mesoscopic phenomena, followed by a concluding description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.
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A few common symbols
11 Twodimensional electron gas 2DEG
12 Effective mass density of states etc
13 Characteristic lengths
14 Lowfield magnetoresistance
Localization and fluctuations
51 Localization length
52 Weak localization
53 Effect of magnetic field
54 Conductance fluctuations
55 Diagrammatic perturbation theory
15 Highfield magnetoresistance
16 Transverse modes or magnetoelectric subbands
17 Drift velocity or Fermi velocity?
Conductance from transmission
21 Resistance of a ballistic conductor
22 Landauer formula
23 Where is the resistance?
24 What does a voltage probe measure?
25 Nonzero temperature and bias
26 Exclusion principle?
27 When can we use the LandauerButtiker formalism?
Transmission function Smatrix and Greens functions
31 Transmission function and the Smatrix
32 Combining Smatrices
a brief introduction
34 Smatrix and the Greens function
or the method of finite differences
37 Relation to other formalisms
38 Feynman paths
Quantum Hall effect
41 Origin of zero resistance
42 Effect of backscattering
61 Coherent resonant tunneling
62 Effect of scattering
63 Singleelectron tunneling
72 Linear optics
73 Nonlinear optics
74 Coherent sources
Nonequilibrium Greens function formalism
81 Correlation and scattering functions
82 Selfenergy and the Greens function
83 Kinetic equation
84 Calculating the selfenergy
85 Summary of solution procedure
86 Current flow and energy exchange
87 Relation to the LandauerButtiker formalism
88 Relation to the Boltzmann formalism
89 Strongly interacting systems
resonant tunneling with phonon scattering
Solutions to exercises
Autres éditions - Tout afficher
amplitude assume backscattering ballistic conductor barriers bias Büttiker calculate Chapter coherent concepts conductor confining potential correlation function current flow described device diagrams discussion effect electrochemical potential electron density energy range equilibrium Fermi energy Feynman paths given Green's Green’s function Hall resistance Hamiltonian Hence inscattering inside the conductor interactions Landau levels lattice lead linear response magnetic field matrix mean free path measured mesoscopic momentum relaxation NEGF formalism non-zero Note number of modes obtain oscillations peak phase phase-breaking phase-coherent phase-relaxation length phonon Phys Physics quantization quantum Hall quantum Hall effect quasi-Fermi level relation resonant tunneling resonant tunneling diode result S-matrix sample scattering functions Schrödinger equation Section self-energy self-energy function semiconductors shown in Fig spatial spectral function subbands terminal tion transmission function transmission probability transport transverse modes vector potential velocity vertical flow voltage probes wave wavefunction weak localization write zero