Semiconductor Nanostructures: Quantum States and Electronic TransportOxford University Press, 2010 - 552 pages This textbook describes the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect, and the Coulomb blockade effect. The book starts out with the basics of solid state and semiconductor physics, such as crystal structure, band structure, and effective mass approximation, including spin-orbit interaction effects important for research in semiconductor spintronics. It contains material aspects such as band engineering, doping, gating, and a selection of nanostructure fabrication techniques. The book discusses the Drude-Boltzmann-Sommerfeld transport theory as well as conductance quantization and the Landauer-Büttiker theory. These concepts are extended to mesoscopic interference phenomena and decoherence, magnetotransport, and interaction effects in quantum-confined systems, guiding the reader from fundamental effects to specialized state-of-the-art experiments. The book will provide a thorough introduction into the topic for graduate and PhD students, and will be a useful reference for lecturers and researchers working in the field. |
Table des matières
1 Introduction | 1 |
2 Semiconductor crystals | 11 |
3 Band structure | 19 |
4 Envelope functions and effective mass approximation | 53 |
5 Material aspects of heterostructures doping surfaces and gating | 63 |
6 Fabrication of semiconductor nanostructures | 83 |
7 Electrostatics of semiconductor nanostructures | 95 |
8 Quantum mechanics in semiconductor nanostructures | 103 |
15 Diffusive quantum transport | 265 |
16 Magnetotransport in twodimensional systems | 287 |
17 Interaction effects in diffusive twodimensional electron transport | 335 |
18 Quantum dots | 341 |
19 Coupled quantum dots | 409 |
20 Electronic noise in semiconductor nanostructures | 427 |
21 Interference effects in nanostructures II | 453 |
22 Quantum information processing | 469 |
9 Twodimensional electron gases in heterostructures | 115 |
10 Diffusive classical transport in twodimensional electron gases | 143 |
11 Ballistic electron transport in quantum point contacts | 175 |
12 Tunneling transport through potential barriers | 193 |
13 Multiterminal systems | 201 |
14 Interference effects in nanostructures I | 225 |
Fourier transform and Fourier series | 521 |
Extended Greens theorem and Greens function | 523 |
The deltafunction | 525 |
527 | |
545 | |
Autres éditions - Tout afficher
Semiconductor Nanostructures: Quantum states and electronic transport Thomas Ihn Aucun aperçu disponible - 2009 |
Expressions et termes fréquents
amplitude applied approximation assume atoms average band barrier calculated called channel charge classical conductance conduction band consider constant contribution corresponding coupling crystal density dependence described determined direction discussed dispersion distribution drain edge effect electric electron gas energy equation example experiment expression factor Fermi finite fluctuations GaAs gate gate voltage given gives Hall hamiltonian increasing integer interaction Landau level lattice leads length limit localization magnetic field material matrix mean measured metal motion noise obtain oscillations parameter path phase physical plane potential probability problem quantization quantum dot quantum mechanical quantum point contact relation resistance resonance result ring sample scale scattering schematically semiconductor shown shows single spin structure surface temperature term theory tion transmission transport tunneling two-dimensional electron vector voltage wave function zero