Trends in Semiconductor Research

Couverture
Nova Publishers, 2005 - 220 pages
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This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir-Blodgett films; resists, lithography and metalisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.
 

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Table des matières

The Hydrosilation of 1Alkene and 1Alkyne at Terraced Dihydrogen Terminated 1 x 1 100 Silicon
1
Valence Band Splitting in CuInSe2 and the Related Ordered Vacancy Compounds CuIn3Se5 CuIn5Se8 and CuIn7Se12
33
InPlane Shaped GaAsAlGaAs ModulationDoped Structures Physics and Applications for THzsubTHz Sensing
59
Effect of Lithium and Gallium Impurities on OptoElectrical Properties of ZnO Films
81
Optical Characterizations of Ferroelectric B1325LA075T13O12 Thin Films from NIR to UV Regions using Spectroscopic Ellipsometry
111
Indium Tin Oxide ITO Thin Films Fabrication Properties Postdeposition Treatments and Applications
137
Optical Properties of ZNi_aMn Se Films
175
Electrical Optical and Structural Properties of AcceptorDoped In203 and Sn02 Transparent Conducting Films Prepared by Spray Pyrolysis Technique
191
Index
217
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