Semiconductor Physics: An IntroductionSpringer Science & Business Media, 9 juin 2004 - 537 pages This book, now in its ninth edition, still has the character of a textbook with the emphasis on "Physics". The volume has increased somewhat because several improvements have been made and some new items have been included. In Sect. 13. 2 the new Quantum Cascade Laser which covers the far in frared spectral range has been added. In Sect. 14. 4 the theory of the quantum Hall effect is now based on ballistic transport which in a more general respect without referring to the then still unknown quantum Hall effect was consid ered already by Rudolf Peierls. In the same chapter, the recent discovery of a low-temperature resistance oscillation in a very pure semiconductor under the influence of combined dc and ac electric fields in addition to a magnetic field is presented. Furthermore, quantum Hall effect observations with an unprece dented high precision are remarkable and may give a new impetus to theory. A new Sect. 15. 5 presents information about coaxial carbon tubes of nanometer size diameter and how they are integrated as the current transporting element in a field effect transistor. In another new addition Sect. 15. 6 with the title Molecular Electronics, the current-voltage rectifying characteristics of an or ganic Langmuir-Blodgett film of nanometer thickness is shown. These efforts serve to demonstrate where the ever decreasing size of electronic circuits may come to its natural limits. The system of units preferred here is the SI system. |
Table des matières
Elementary Properties of Semiconductors | 1 |
Single and Periodically Repeated Potential Well | 10 |
Semiconductor Statistics | 35 |
17 | 43 |
9 | 65 |
Hot Electrons and Energy Relaxation Time | 104 |
Carrier Diffusion Processes | 118 |
5 | 137 |
5 | 237 |
4 | 275 |
Noise | 280 |
3 | 299 |
Impact Ionization and Avalanche Breakdown | 312 |
11 | 324 |
3 | 330 |
4 | 338 |
7 | 144 |
8 | 151 |
Scattering Processes in a Spherical OneValley Model | 159 |
5 | 175 |
7 | 181 |
8 | 187 |
13 | 194 |
81 | 213 |
Charge Transport and Scattering Processes | 222 |
15 | 235 |
Photoconductivity | 402 |
13 | 416 |
14 | 428 |
Surface and Interface Properties | 443 |
Miscellaneous Semiconductors | 476 |
4 | 485 |
516 | |
About the Author | 537 |
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Expressions et termes fréquents
absorption acceptor applied approximation assumed atoms B₂ band edge band gap Brillouin zone calculation carrier concentration carrier density charge cm²/Vs coefficient conduction band consider crystal current density curve deformation potential scattering denoted dependence dielectric constant diffusion diode direction donors doped drift velocity effective mass electric field emission emitter energy band equation experimental factor Fermi energy Fermi level field intensity field strength frequency function GaAs germanium given Hall effect InSb integral introduce ionized impurity scattering kV/cm laser lattice layer longitudinal low temperatures magnetic field magnetoresistance metal mobility momentum relaxation n-type n-type semiconductor observed obtained optical order of magnitude oscillations p-n junction phonon Phys polar quantum ratio recombination room temperature sample scattering process Sect semiconductor shown in Fig silicon superlattice surface thermal transistor transition valence band valleys vector voltage wave wavelength yields θε